Advanced design activities are focusing on the field of specific on-resistance as the major benchmark parameter to get a offered technology. The number of power modules with SiC components will be complemented step by step with even further parts, using either the combination of SiC diodes with silicon transistors and https://www.facebook.com/permalink.php?story_fbid=pfbid02jiwHc8rb8XoM8PPo4GYNg1DhJRpQiYL4ynt8NSxtnaEM33zEdPnXuYULBuWpacFhl&id=61560512640678&__cft__[0]=AZUDgS4LVgUAPgfPPyifPFicKB29cou-l2QgrxFSEfMO6390aX1FZ4tRGQlEkt1o2keeQ0MgMwKv59O0AhbycmxqjgsXWIAtOdGrLlvncIElf1HpA8EplDL-zYnZt09X8Ri2yikosojqKlygPtKSzFfmiifNigE3GaE4_IB4drUEAuCaWA7U9aaOWKNMw34ro5cyKhsHhXVN-sXs5eln3jhe&__tn__=%2CO%2CP-R